Solid state GaN power amplifiers save design time

13th July 2016
Posted By : Nat Bowers
Solid state GaN power amplifiers save design time


Fairview Microwave has announced a line of solid state GaN power amplifiers offering designers a unique solution of off-the-shelf components, typically requiring months of lead time to acquire.

The rugged connectorised amplifier designs from Fairview have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. The high thermal conductivity of Gallium Nitride helps to dissipate heat more effectively which results in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies. Common applications include commercial and military radar, jamming systems, medical imaging, communications and electronic warfare.

Fairview’s newest offering of GaN RF amplifiers includes models that feature very high gain levels from 43 to 60dB across mostly broad frequency bands ranging from 30MHz to 7.5GHz. Saturated output power levels range from 10 to 100W with up to 35% Power Added Efficiency (PAE). All of the high power GaN amplifiers from Fairview have single voltage supplies which are internally regulated. The 50Ω input/output matched designs are adaptable to a range of power and modulation requirements. These GaN solid state power amplifiers also show impressive harmonic response (-15 to -20dBc) under worst case conditions. This selection of GaN amplifiers are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.

Brian McCutcheon, Vice President and General Manager, Fairview Microwave, commented: “Fairview’s new selection of GaN power amplifiers offer engineers and designers a unique off-the-shelf, in-stock solution which would otherwise take months to acquire."

Fairview’s GaN amplifiers are in-stock and ready to ship.

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