MACOM 5W GaN power transistor in ultra-small package

Posted By : Nat Bowers
MACOM 5W GaN power transistor in ultra-small package

At European Microwave Week 2013 in Nurnberg, Germany, M/A-COM Technology Solutions announce a new GaN unmatched wideband transistor in SOT-89 package that is ideally suited to 50 V operation in driver and power applications. The MAGX-000040-00500P is an effective solution for customers who need a reliable power device with wideband performance and high voltage operation.

Operating over the DC - 4.0 GHz frequency bandwidth, the MAGX-000040-00500P is packaged in a light weight 2.5mm x 4.5mm SOT-89 plastic surface-mount package that allows customers easy implementation and assembly. The transistor delivers reliable operation at junction temperature of 158 °C in CW mode with the device being rated to a maximum junction temperature of 200 °C. Boasting small size, surface-mount assembly and reliable high voltage operation, the device provides customers a high performing alternative to traditional flanged or metal-backed module components.

Paul Beasly, Product Manager, MACOM, comments: “RF and Microwave designers are continuously challenged to improve Size, Weight and Performance of radar and communication systems. The newest 5 W addition to the GaN in Plastic family extends MACOM’s leadership in supporting customers to meet design challenges with the key advantages of 50 V bias, CW operation and small-size, surface mount plastic packaging.”

The table below outlines typical performance:

MAGX-000040-00500P specification table

Production quantities and samples of MAGX-000040-00500P are available from stock.


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