GaN RF power transistors come in 10 to 200W ratings

15th December 2015
Source: Ampleon
Posted By : Jordan Mulcare
GaN RF power transistors come in 10 to 200W ratings

Ampleon has announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10, 30, 50 and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100 and 200W push-pull packages for use in final stages up to S band.

Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).

Thijs Tullemans, Senior Director of Marketing, Ampleon Multi Market Business Unit, said: “We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure. Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months.”

Optimised for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems and broadband solutions.

Devices available include the CLF1G0035S-50, a broadband 50W amplifier capable of operation from DC through to 3.5GHz that is designed for operation up to 50V and having excellent VSWR (ruggedness) capabilities of 10:1. 100W devices have just been released and Ampleon are currently sampling other types for mass production during early 2016.

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