GaN on SiC RF power transistors suit mobile broadband

18th May 2016
Source: Ampleon
Posted By : Nat Bowers
GaN on SiC RF power transistors suit mobile broadband

Ampleon has introduced its 2nd gen 50V 0.5µm GaN on SiC RF power transistors, dedicated for mobile broadband applications. Providing a 5% improvement in power efficiency compared to LDMOS-based devices and enabling high-power multiband applications, this GaN family also offers a size reduction in the order of 30 to 50%, when compared to similar LDMOS transistors.

PA designers can now more easily find the perfect fit for each particular set of requirements, be it efficiency, size, power and cost, while getting the full benefit of Ampleon’s experience in PA and transistor design and manufacturing. The portfolio will include transistors with 15 to 600W of peak power for all major cellular bands between 1.8 and 3.8GHz.

The CLF2H27LS-140 is a single-ended transistor providing 140W of peak power in band 41. Other devices currently sampling include the CLF2H1822LS-160 and CLF2H1822LS-220 suitable for 1.8 to 2.2GHz multiband applications and the CLF2H38LS-140 and CLF2H38LS-40 (driver) for 3.4 to 3.8GHz applications with 140 and 40W outputs at P3dB.

The family is suitable for RF PA designers developing high efficiency or multiband Doherty power amplifiers for use in wireless infrastructure networks.

Ampleon provides comprehensive application support, including ready-to-go Doherty reference designs optimised for mass-production.


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