Enhanced gallium nitride technology increases user flexibility

11th October 2017
Posted By : Joe Bush
Enhanced gallium nitride technology increases user flexibility

An optimised version of WIN Semiconductors Corp’s 0.25µm gallium nitride technology, NP25, provides increased DC and RF transistor performance. NP25 is a 0.25µm gate GaN-on-SiC process, and offers users the flexibility to produce both fully integrated amplifier products as well as custom discrete transistors. In production since 2014, the optimised 0.25µm process offers increased RF performance with fast switching time, higher gain and increased power added efficiency for demanding power applications through Ku-band.

Optimised NP25 transistors exhibit more DC and RF IV characteristics and provide 2dB higher maximum stable gain. Increased gain leads directly to higher power density and PAE under a range of tuning and bias conditions. This performance optimised process is fully qualified and supported with a design kit and transistor models.

The WIN NP25 technology is fabricated on four inch silicon carbide substrates and operates at a drain bias of 28V. At 10GHz, NP25 provides saturated output power of 5W/mm with 19dB linear gain and over 65% power added efficiency. These performance metrics make the NP25 process well suited for a variety of high power, broad bandwidth and linear transmit functions in the radar, satellite communications and wireless infrastructure markets.

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