WIN Semiconductors

No. 69, Technology 7th Rd., Hwaya Technology Park, Guishan District., Taoyuan City, Taiwan 333

Phone: 886-3-397-5999


WIN Semiconductors articles

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GaAs technology spearheads mmwave 5G chip production

GaAs technology spearheads mmwave 5G chip production
As 5G user equipment and network infrastructure in the sub-6GHz and mmWave frequency bands rolls out, GaAs technology will play an important role because front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and active antenna arrays employed in mmWave network infrastructure.
30th September 2018

0.45um GaN power process for 5G applications

0.45um GaN power process for 5G applications
To support current and future 5G applications, WIN Semiconductors has expanded its gallium nitride (GaN) process capabilities to include a 0.45um-gate technology. The NP45-11 GaN-on-SiC process from WIN Semiconductors allows customers to design hybrid Doherty power amplifiers used in 5G applications including MIMO (multiple-input and multiple-output) wireless antenna systems. MIMO base stations often combine Doherty power amplifiers with linearisation techniques to meet demanding linearity and efficiency specifications of today's wireless infrastructure.
11th June 2018

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