Integrated Device Technology has introduced two high-isolation, low-loss, high linearity broadband RF switches for a wide variety of applications. Operating at 50 to 8000MHz, the F2932 and F2933 are silicon-based, low-distortion 50Ω SPDT switches. With industry-standard 4x4mm 16-pin QFN packages and drop-in compatible footprints and control, the devices are suited for communications and public safety systems, radar and general purpose switching.
At 4GHz, the F2932 and F2933 deliver: high isolation of 66dB; low distortion of 64dBm IIP3 at 15dBm tones, with 1MHz channel spacing; insertion loss of 0.93dB; and P1dB of more than 35dBm. The inherent benefits over most competitive products, particularly when compared to typical GaAs-based switches, are better RF performance, greater reliability, easier integration and lower total solution cost.
Chris Stephens, General Manager, RF division, IDT, commented: “These two new devices offer one of the industry’s highest isolation values and, when combined with their low distortion and low insertion loss, they provide superior performance for many different high-isolation applications. These switches represent the latest way IDT is helping engineers meet the demanding requirements of today’s RF designs.”
F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.