0.45um GaN power process for 5G applications

11th June 2018
Posted By : Alex Lynn
0.45um GaN power process for 5G applications

To support current and future 5G applications, WIN Semiconductors has expanded its gallium nitride (GaN) process capabilities to include a 0.45um-gate technology. The NP45-11 GaN-on-SiC process from WIN Semiconductors allows customers to design hybrid Doherty power amplifiers used in 5G applications including MIMO (multiple-input and multiple-output) wireless antenna systems. MIMO base stations often combine Doherty power amplifiers with linearisation techniques to meet demanding linearity and efficiency specifications of today's wireless infrastructure.

NP45-11 technology supports power applications from 100MHz through 6GHz. This discrete transistor process is environmentally rugged, incorporating advanced moisture protection and meets the JEDEC JESD22-A110 biased HAST qualification at 55V.

The NP45-11 technology is fabricated on 100mm silicon carbide substrates and operates at a drain bias of 50V. In the 2.7GHz band, this technology provides saturated output power of 7W/mm with 18dB linear gain and more than 65% power added efficiency without harmonic tuning.

"5G radio access networks create several challenges to power amplifier designs used in MIMO systems. High output power and linear efficiency are primary design objectives to meet performance specifications and lower total cost of ownership. The tradeoff between output power and linearised efficiency is significant because of the high peak-to-average power ratio employed in today’s wireless modulation schemes. This tradeoff becomes more difficult in 5G applications due to greater instantaneous bandwidth requirements and higher operating frequency," said David Danzilio, Senior Vice President of WIN Semiconductors.

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