LTE LNAs improve smartphone data rates by up to 96%

27th January 2014

Nat Bowers

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Designed specifically to enhance the data rate in smartphones, the BGA7x1N6 and BGM7xxxx4L12 series of LTE LNAs and Quad LNA banks have been introduced by Infineon. In order to increase system sensitivity and ensure the best possible user experience, the LNAs and LNA banks are located in both the diversity and main antenna path of the phone.

Exploiting the full potential of LTE, the BGA7x1N6 and BGM7xxxx4L12 families allow for data rates that are up to 96% higher than in solutions without LNAs. The devices feature high linearity to ensure optimal signal reception even in conditions of poorly isolated antenna and long line losses between antenna and transceiver. Compared to systems without LNAs, these series offer typical sensitivity improvement of 3.4dB in packages 70% smaller (1.1x0.7 mm) than previously available LNAs and 61% smaller (1.9x1.1mm) than previously available LNA banks.

Based on the company’s advanced Silicon Germanium chip technology, the LNAs and LNA banks feature built-in ESD protection. Infineon offers three LTE LNAs and seven Quad LNA bank families for differing band configurations in different world regions. Each letter in the series denotes a different frequency band (L for the low, 0.7 to 1.0 GHz band; M for mid, 1.7 to 2.2 GHz band; and H for high, 2.3 to 2.7 GHz band). Supplied in RoHS compliant TSNP-6-2 or TSLP 12-4 plastic packages, the three LTE LNAs are the BGA7L1N6, BGA7M1N6 and BGA7H1N6; while the seven Quad LNA banks are the BGM7LLHM4L12, BGM7LLMM4L12, BGM7MLLH4L12, BGM7MLLM4L12, BGM7LMHM4L12, BGM7HHMH4L12 and BGM7MHLL4L12.

Also referred to as 4G, LTE is the latest standard for wireless communication which allows for data rates up to 300Mb/s, almost six times more than the 56Mb/s offered by the latest UMTS (3G) release. Significantly increasing smartphone users’ comfort and satisfaction, this results in mobile internet connection without notable loading times. However, there are challenges to address. The RF front end is becoming increasingly complex, resulting in greater usage of RF components, e.g. switches, diplexers and dividers. This leads to increasing losses over the whole system and deterioration of the SNR. Additionally, the distance between antennas and the RF transceiver leads to additional line losses which can also negatively affect SNR and consequently data rate.