Ultra-wideband Doherty amplifier reference design
NXP's ultra-wideband Doherty reference design has been updated. Now AWR Microwave Office design environment ready, the updated reference design incorporates the BLF884P and BLF884PS transistors for ultra-wideband Doherty power amplifiers (which operate from 470 to 806 MHz) and a 70 W DVB-T UWB LDMOS reference design (which uses NXP’s patent-pending architecture capable of operating over an ultra-wideband spectrum in the UHF broadcast spectrum).
Also announced today by the companies is an updated version of NXP Semiconductor's laterally-diffused metal oxide semiconductor Large Signal Device model library (which can now be used with AWR’s Microwave Office software). Incorporating RF power transistors which are specifically designed for the 2.45 GHz ISM frequency band, the updated RF model library enables RF energy to be used as a clean, highly efficient and controllable heat source.
Achieving best-in-class efficiencies in excess of 52%, the NXP BLF2425M and BLF25M series of RF power transistors are optimised for industrial, scientific and medical radio bands. Suited for use in home appliances for cooking, heating and drying; precision medical devices and automotive ignition, the BLF2425M and BLF25M RF power transistors provide a full range of power levels between 12 and 350 W.
NXP's updated ultra-wideband Doherty reference design and the BLF2425M and BLF25M RF power transistors are available now. The updated LDMOS Large Signal Device model library can be downloaded free of charge from NXP's website.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
| SKU: | |
|---|---|
| Stock: | 3490 |
| Cost: | $3.95 |
