Frequency

RF amplifiers remove the need for RF tuning components

13th October 2014
Siobhan O'Gorman
0
Datasheets

Eight linear amplifiers, designed to provide accurate signal amplification for a wide range of applications, have been introduced by Pasternack Enterprises. The high power amplifiers, which are GaAs PHEMT MMIC-based, are suitable for commercial and defence applications such as communications, radar and sensor, test instrumentation, telecomm infrastructure, fixed microwave backhaul and commercial two-way radio.

Operating from 0.8 to 9.5GHz, the devices can be used as high power output or driver amplifiers. The amplifiers provide a 19-32.5dB gain range along with a choice of gain levels, frequency ranges and power outputs. Third order intercept levels (IP3) from 38.5 to 47dBm and gain flatness from ±0.5 to ±2dB are also offered by the RF amplifiers. Housed in an aluminium enclosure with mounting holes, the amplifiers provide an improved heat dissipation path and easy installation.

Due to the GaAs PHEMP MMIC circuitry, the RF amplifiers are suitable for input and output at 50Ω, removing the need for external RF tuning components. This circuitry also allows the amplifiers to operate between a -55 to +85°C temperature range.

"We are very pleased to offer this family of GaAs MMIC-based broadband high power amplifier modules to the market as it brings additional diversity and versatility to our growing RF amplifier offering," says Michael Rachlin, Director of Product Management, Pasternack. “Providing our industry with a comprehensive selection of market-leading amplifier solutions available for immediate shipment is a key strategic objective for Pasternack because it eliminates our customers’ burden of extended lead times which is common throughout the industry.”

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